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| Ordering number : ENN6673 FW238 N-Channel Silicon MOSFET FW238 Load Switching Applications Features * * Package Dimensions unit : mm 2129 [FW238] 8 5 0.3 4.4 6.0 0.2 5.0 Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.1 1.5 1.8max 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 0.43 Conditions Ratings 30 20 5 Unit V V A A W W C C PW10s, duty cycle1% Mounted on a ceramic board (1500mm2!0.8mm) 1unit Mounted on a ceramic board (1500mm2!0.8mm) 52 1.7 2.0 150 --55 to +150 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=4A, VGS=4V Ratings min 30 1 10 1.0 4.9 7.0 37 52 49 73 2.4 typ max Unit V A A V S m m Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1000 TS IM TA-2904 No.6673-1/4 FW238 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0 Ratings min typ 550 130 80 10 95 55 50 13 1.5 2.2 0.85 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Marking : W238 Switching Time Test Circuit VDD=15V VIN 10V 0V VIN PW=10s D.C.1% ID=5A RL=3 D VOUT G P.G 50 FW238 S 9 ID -- VDS V 10 9 8 ID -- VGS VDS=10V 10.0 Drain Current, ID -- A 6.0 7 6 5 4 3 2 1 0 0 0.1 0.2 3.5 V V 3.0 V 8 4.0 V Drain Current, ID -- A 7 6 5 4 3 2 1 0 VGS=2.5V Ta= 7 5C 0 --25 0.5 1.0 1.5 2.0 2.5 C 25C 3.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.5 IT02266 Drain-to-Source Voltage, VDS -- V 100 IT02265 100 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m 80 80 5A ID=4A 60 60 4A, I D= =4V VGS 0V S=1 40 40 , VG I D=5A 20 20 0 0 2 4 6 8 10 12 14 16 18 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT02267 Ambient Temperature, Ta -- C IT02268 No.6673-2/4 FW238 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT02269 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.1 0.2 0.3 C 25 = Ta 5C -- 2 C 75 Ta= 75C 25C 0.4 0.5 0.001 0.6 0.7 0.8 0.9 1.0 Drain Current, ID -- A 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 15 20 25 Diode Forward Voltage, VSD -- V 10 9 --25 C IT02270 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V VGS -- Qg VDS=10V ID=5A 8 7 6 5 4 3 2 1 0 Ciss, Coss, Crss -- pF Ciss Coss Crss 30 IT02271 100 7 5 3 2 0 2 4 6 8 10 12 14 IT02272 Drain-to-Source Voltage, VDS -- V 1000 7 5 Total Gate Charge, Qg -- nC SW Time -- ID VDD=15V VGS=10V Drain Current, ID -- A ASO IDP=52A 10 <10s Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 10 IT02273 7 1m ID=5A DC op er 10 100s s td(off) tf 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ms 0m s td(on) tr ati on Operation in this area is limited by RDS(on). 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board(1500mm2!0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Drain Current, ID -- A 2.5 PD -- Ta Drain-to-Source Voltage, VDS -- V 5 7 100 IT02274 Allowable Power Dissipation, PD -- W 2.0 1.7 1.5 1u nit To t al di ss ip 1.0 ati on 0.5 0 0 Mounted on a ceramic board(1500mm !0.8mm) 20 40 60 80 100 120 140 160 2 Amibient Tamperature, Ta -- C IT02275 No.6673-3/4 FW238 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2000. Specifications and information herein are subject to change without notice. PS No.6673-4/4 |
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